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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

Name: GaAs Wafer Include 26 Inch Ingot Wafers For LED LD And Microelectronics
Brand: PAM-XIAMEN
Price: 1 USD

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Payment Terms : T/T

Delivery Time : 5-50 working days

Price : By Case

name : GaAs wafer

application : LD and Microelectronics

size : 2-6 inch

type : Gallium Arsenide Wafer

Dopant : Silicon

Thickness : 220~450um

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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED ,LD And Microelectronics

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type	SC/p-type with Zn dope Available
Growth Method	VGF
Dopant	Silicon	Zn available
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut availalbe
Crystal Orientation	(100)2°/6°/15° off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000cm2/V.sec
Etch Pit Density	<5000/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~450um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type
Growth Method	VGF
Dopant	Silicon
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut available
Crystal Orientation	(100)2°/6°/15°off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000 cm2/V.sec
Etch Pit Density	<500/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~350um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Insulating
Growth Method	VGF
Dopant	Undoped
Wafer Diamter	2, 3 & 4 inch	Ingot available
Crystal Orientation	(100)+/- 0.5°
OF	EJ, US or notch
Carrier Concentration	n/a
Resistivity at RT	>1E7 Ohm.cm
Mobility	>5000 cm2/V.sec
Etch Pit Density	<8000 /cm2
Laser Marking	upon request
Surface Finish	P/P
Thickness	350~675um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Semi-insulating
Grow Method	VGF
Dopant	Undoped
Type	N
Diamater(mm)	150±0.25
Orientation	(100)0°±3.0°
NOTCH Orientation	〔010〕±2°
NOTCH Deepth(mm)	(1-1.25)mm 89°-95°
Carrier Concentration	N/A
Resistivity(ohm.cm)	＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s)	N/A
Dislocation	N/A
Thickness(µm)	675±25
Edge Exclusion for Bow and Warp(mm)	N/A
Bow(µm)	N/A
Warp(µm)	≤20.0
TTV(µm)	≤10.0
TIR(µm)	≤10.0
LFPD(µm)	N/A
Polishing	P/P Epi-Ready

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item	Specifications	Remarks
Diamater(mm)	Ф 50.8mm ± 1mm
Thickness	1-2um or 2-3um
Marco Defect Density	≤ 5 cm-2
Resistivity(300K)	>108 Ohm-cm
Carrier	＜0.5ps
Dislocation Density	<1x106cm-2
Useable Surface Area	≥80%
Polishing	Single side polished
Substrate	GaAs Substrate

* We also can provide poly crystal GaAs bar, 99.9999%(6N).

(GaAs) Gallium Arsenide Wafers

(GaAs)Gallium Arsenide Wafers for LED Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type	SC/p-type with Zn dope Available
Growth Method	VGF
Dopant	Silicon	Zn available
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut availalbe
Crystal Orientation	(100)2°/6°/15° off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000cm2/V.sec
Etch Pit Density	<5000/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~450um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type
Growth Method	VGF
Dopant	Silicon
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut available
Crystal Orientation	(100)2°/6°/15° off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000 cm2/V.sec
Etch Pit Density	<500/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~350um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Insulating
Growth Method	VGF
Dopant	Undoped
Wafer Diamter	2, 3 & 4 inch	Ingot available
Crystal Orientation	(100)+/- 0.5°
OF	EJ, US or notch
Carrier Concentration	n/a
Resistivity at RT	>1E7 Ohm.cm
Mobility	>5000 cm2/V.sec
Etch Pit Density	<8000 /cm2
Laser Marking	upon request
Surface Finish	P/P
Thickness	350~675um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Semi-insulating
Grow Method	VGF
Dopant	Undoped
Type	N
Diamater(mm)	150±0.25
Orientation	(100)0°±3.0°
NOTCH Orientation	〔010〕±2°
NOTCH Deepth(mm)	(1-1.25)mm 89°-95°
Carrier Concentration	N/A
Resistivity(ohm.cm)	＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s)	N/A
Dislocation	N/A
Thickness(µm)	675±25
Edge Exclusion for Bow and Warp(mm)	N/A
Bow(µm)	N/A
Warp(µm)	≤20.0
TTV(µm)	≤10.0
TIR(µm)	≤10.0
LFPD(µm)	N/A
Polishing	P/P Epi-Ready

2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item	Specifications	Remarks
Diamater(mm)	Ф 50.8mm ± 1mm
Thickness	1-2um or 2-3um
Marco Defect Density	≤ 5 cm-2
Resistivity(300K)	>108 Ohm-cm
Carrier	＜0.5ps
Dislocation Density	<1x106cm-2
Useable Surface Area	≥80%
Polishing	Single side polished
Substrate	GaAs Substrate

* We also can provide poly crystal GaAs bar, 99.9999%(6N).

Product Tags:

gallium arsenide wafer

n type silicon wafer

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